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PD - 91802C
IRF7353D1
FETKY ? MOSFET / Schottky Diode
l
Co-packaged HEXFET ? Power MOSFET
and Schottky Diode
A
1
8
K
V DSS = 30V
l Ideal For Buck Regulator Applications
A
2
7
K
l N-Channel HEXFET
l Low V F Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
Description
S
G
3
4
Top View
6
5
D
D
R DS(on) = 0.029 ?
Schottky Vf = 0.39V
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (T A = 25°C unless otherwise noted)
SO-8
Parameter
Maximum
Units
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
dv/dt
T J, T STG
Continuous Drain Current
Pulsed Drain Current à
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt á
Junction and Storage Temperature Range
6.5
5.2
52
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Maximum
Units
R θ JA
Junction-to-Ambient ?
62.5
°C/W
Notes:
? Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
? Starting T J = 25°C, L = 10mH, R G = 25 ? , I AS = 4.0A
? I SD ≤ 4.0A, di/dt ≤ 74A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C
? Surface mounted on FR-4 board, t ≤ 10sec .
www.irf.com
1
10/20/04
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IRF7353D2TR 功能描述:MOSFET N-CH 30V 6.5A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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